Microchip Technology 2N2432UB BJTs - Bipolar Transistors Small-Signal BJT
Model2N2432UB
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 400
Collector- Base Voltage VCBO: 30 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 150 uV
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