Micro Commercial Components (MCC) MIW40N120FLAHE3-BP IGBT Transistors Trench Field Stop IGBT 1200V 40A
ModelMIW40N120FLAHE3-BP
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Technology: Si
Configuration: Single
Qualification: AEC-Q101
Mounting Style: Through Hole
Pd - Power Dissipation: 428 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.4 V
Continuous Collector Current at 25 C: 80 A
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