Marktech Optoelectronics MTD8600N-T Phototransistors Photo Diode 880nm
ModelMTD8600N-T
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Width: 4.65 mm
Height: 6.2 mm
Length: 4.65 mm
Fall Time: 10 us
Rise Time: 10 us
Wavelength: 880 nm
Dark Current: 100 nA
Mounting Style: Through Hole
Peak Wavelength: 880 nm
Pd - Power Dissipation: 250 mW
Half Intensity Angle Degrees: 24 deg
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 30 C
Maximum On-State Collector Current: 50 mA
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Breakdown Voltage: 30 V
Collector-Emitter Saturation Voltage: 200 mV
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