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MACOM PXAD184218FV-V1-R0 RF Power MOSFET RF LDMOS FET

ModelPXAD184218FV-V1-R0
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Gain: 16 dB

Technology: Si

Output Power: 420 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.805 GHz to 1.88 GHz

Transistor Polarity: Dual N-Channel

Vgs - Gate-Source Voltage: 10 V

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V

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