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Gain: 17 dB
Technology: Si
Output Power: 350 W
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 1.2 GHz to 1.4 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: 3.35 V
Id - Continuous Drain Current: 150 mA
Rds On - Drain-Source Resistance: 100 mOhms
Vds - Drain-Source Breakdown Voltage: 105 V
