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Gain: 15.5 dB
Technology: Si
Output Power: 190 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.805 GHz to 1.88 GHz
Transistor Polarity: Dual N-Channel
Vgs - Gate-Source Voltage: 10 V
Maximum Operating Temperature: + 200 C
Rds On - Drain-Source Resistance: 150 mOhms
Vds - Drain-Source Breakdown Voltage: 65 V
