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Gain: 10 dB
Technology: Si
Unit Weight: 20.831 g
Output Power: 100 W
Configuration: Single
Operating Frequency: 400 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 270 W
Vgs - Gate-Source Voltage: + 40 V
Id - Continuous Drain Current: 13 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Vds - Drain-Source Breakdown Voltage: 65 V
Vgs th - Gate-Source Threshold Voltage: 3 V
