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Technology: Si
Unit Weight: 185 mg
Carrier Life: 100 ns
If - Forward Current: 100 mA
Ir - Reverse Current: 10 uA
Vf - Forward Voltage: 1.25 V
Vr - Reverse Voltage: 70 V
Pd - Power Dissipation: 100 mW
Maximum Diode Capacitance: 0.02 pF
Maximum Operating Frequency: 40 GHz
Minimum Operating Frequency: 100 MHz
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Maximum Series Resistance @ Maximum IF: 2.8 Ohms
