MACOM GTVA262711FA-V2-R0 GaN FETs 300W GaN HEMT 48V 2496 to 2690MHz

Gain: 18 dB

Technology: GaN

Output Power: 300 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 2.69 GHz

Minimum Operating Frequency: 2.62 GHz

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 225 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 125 V