MACOM GTVA107001EC-V1-R250 GaN FETs GaN HEMT 50V 0.9-1.2GHz 700W
ManufacturerMACOM(View more products from this manufacturer)
ModelGTVA107001EC-V1-R250
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Gain: 18 dB
Technology: GaN
Output Power: 890 W
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 1.215 GHz
Minimum Operating Frequency: 960 MHz
Id - Continuous Drain Current: 10 A
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
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