MACOM GTVA104001FA-V1-R0 GaN FETs GaN HEMT 50V 0.9-1.2GHz 400W
ManufacturerMACOM(View more products from this manufacturer)
ModelGTVA104001FA-V1-R0
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Gain: 19 dB
Technology: GaN
Output Power: 400 W
Mounting Style: Screw Mount
Development Kit: LTN/GTVA104001FA-V1
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 1.215 GHz
Minimum Operating Frequency: 960 MHz
Id - Continuous Drain Current: 4.6 A
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts