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MACOM CGHV50200F GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt | EMIN.CO.TH

GaN FETs
MACOM CGHV50200F GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt

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MACOM CGHV50200F GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt

ManufacturerMACOM(View more products from this manufacturer)

ModelCGHV50200F

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Gain: 11.5 dB

Technology: GaN

Output Power: 180 W

Mounting Style: Screw Mount

Development Kit: CGHV50200F-AMP

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 5 GHz

Minimum Operating Frequency: 4.4 GHz

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3.4 V

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