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MACOM CGH60120D-GP4 GaN HEMTs GaN HEMT Die DC-6.0GHz, 120 Watt | EMIN.CO.TH

GaN FETs
MACOM CGH60120D-GP4 GaN HEMTs GaN HEMT Die DC-6.0GHz, 120 Watt

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MACOM CGH60120D-GP4 GaN HEMTs GaN HEMT Die DC-6.0GHz, 120 Watt

ManufacturerMACOM(View more products from this manufacturer)

ModelCGH60120D-GP4

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Gain: 13 dB

Technology: GaN

Output Power: 120 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Number of Channels: 8 Channel

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 4 GHz

Id - Continuous Drain Current: 12 A

Rds On - Drain-Source Resistance: 100 mOhms

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V

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