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Gain: 18 dB
Technology: GaN
Output Power: 30 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 21.6 W
Maximum Drain Gate Voltage: 28 V
Maximum Operating Frequency: 2.7 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 84 V
Vgs th - Gate-Source Threshold Voltage: - 3.8 V
