Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 21 dB
Technology: GaN
Output Power: 20 W
Configuration: Single
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 56 W
Maximum Drain Gate Voltage: 28 V
Maximum Operating Frequency: 2.5 GHz
Minimum Operating Frequency: 300 MHz
Id - Continuous Drain Current: 28 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
