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Gain: 16.5 dB
Technology: GaN
Unit Weight: 4.200 g
Output Power: 10 W
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 1.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs th - Gate-Source Threshold Voltage: - 2.7 V
