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Vgs(th): 1 V
Vgs (Max): 30V
Gate Charge (Qg): 113nC
Power consumption: 860mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 1000V
Continuous drain current: 26A
Input Capacitance (Ciss): 3290pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 320mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
