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Fall Time: 6 ns
Rise Time: 0.6 ns
Technology: Si
Unit Weight: 360 mg
Channel Mode: Enhancement
Mounting Style: Through Hole
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Voltage: - 25 V, + 30 V
Typical Turn-On Delay Time: 0.5 ns
Typical Turn-Off Delay Time: 2 ns
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 mS
Rds On - Drain-Source Resistance: 45 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
