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Fall Time: 28 ns
Rise Time: 30 ns
Technology: Si
Unit Weight: 8 g
Mounting Style: SMD/SMT
Qg - Gate Charge: 264 nC
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 30 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 43 S
Rds On - Drain-Source Resistance: 245 mOhms
Vds - Drain-Source Breakdown Voltage: 1 kV
