IXYS MMIX1F360N15T2 TrenchT2 GigaMOS HiperFET Power MOSFET SMPD Power Device

Width: 23.25 mm

Height: 5.7 mm

Length: 25.25 mm

Fall Time: 265 ns

Rise Time: 170 ns

Technology: Si

Unit Weight: 8 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 715 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 680 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 115 ns

Id - Continuous Drain Current: 235 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 140 S

Rds On - Drain-Source Resistance: 4.4 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 5 V