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IXYS IXYX40N250CHV IGBT Transistors TO247 2500V 40A IGBT

ModelIXYX40N250CHV
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Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 1.5 kW

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.5 kV

Collector-Emitter Saturation Voltage: 4 V

Continuous Collector Current at 25 C: 154 A

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