IXYS IXYN200N65B5 IGBT Transistors 650V, 200A, XPT Gen5 B5 IGBT in SOT-227
ManufacturerIXYS(View more products from this manufacturer)
ModelIXYN200N65B5
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Technology: Si
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 1.2 kW
Gate-Emitter Leakage Current: 300 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 390 A
Collector-Emitter Saturation Voltage: 1.2 V
Continuous Collector Current at 25 C: 390 A
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