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IXYS IXYN120N120C3 IGBT Transistors SOT227 1200V 120A XPT

ModelIXYN120N120C3
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Technology: Si

Unit Weight: 27 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.2 kW

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 240 A

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