IXYS IXYN100N65C3H1 IGBT Transistors 650V/166A XPT Copacked SOT-227B
ManufacturerIXYS(View more products from this manufacturer)
ModelIXYN100N65C3H1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 30 g
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 600 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 166 A
Collector-Emitter Saturation Voltage: 2.3 V
Continuous Collector Current at 25 C: 160 A
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts