IXYS IXYK110N120A4 IGBT Transistors TO264 1200V 110A GENX4
ManufacturerIXYS(View more products from this manufacturer)
ModelIXYK110N120A4
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 1.36 kW
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 900 A
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 375 A
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