IXYS IXYH85N120C4 IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
ManufacturerIXYS(View more products from this manufacturer)
ModelIXYH85N120C4
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 1.15 kW
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 240 A
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 240 A
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