IXYS IXYH60N65A5 IGBT Transistors 650V, 60A, XPT Gen5 A5 IGBT in TO-247AD
ManufacturerIXYS(View more products from this manufacturer)
ModelIXYH60N65A5
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 395 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 134 A
Collector-Emitter Saturation Voltage: 1.23 V
Continuous Collector Current at 25 C: 134 A
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