IXYS IXYH120N65B3 IGBT Transistors TO247 650V 120A GENX3
ManufacturerIXYS(View more products from this manufacturer)
ModelIXYH120N65B3
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 1.36 kW
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 760 A
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 340 A
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