IXYS IXXN100N60B3H1 IGBT Transistors XPT 600V IGBT GenX3 w/Diode
ManufacturerIXYS(View more products from this manufacturer)
ModelIXXN100N60B3H1
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Technology: Si
Unit Weight: 27 g
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 500 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 170 A
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