IXYS IXXA50N60B3 IGBT Transistors TO220 600V 50A XPT
ManufacturerIXYS(View more products from this manufacturer)
ModelIXXA50N60B3
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Technology: Si
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 600 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Continuous Collector Current Ic Max: 200 A
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 120 A
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