IXYS IXTY01N100D MOSFET Small Signals MOSFET N-CH DEPLETN 1000V 100MA TO-25

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Fall Time: 6 ns

Rise Time: 6 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 80 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V