IXYS IXTX22N100L MOSFETs LINEAR PWR MOSFET N-CHAN 1000V 22A

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Fall Time: 50 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 270 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 700 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 36 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 600 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 5.5 V