IXYS IXTA260N055T2-7 TrenchT2 Power MOSFET 260 Amps 55V

Width: 10.2 mm

Height: 4.7 mm

Length: 9.4 mm

Fall Time: 24 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 140 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 480 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 260 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 55 S

Rds On - Drain-Source Resistance: 3.3 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 4 V