IXYS IXGK35N120BD1 IGBT Transistors 70 Amps 1200V 3.3 V Rds
ManufacturerIXYS(View more products from this manufacturer)
ModelIXGK35N120BD1
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Width: 5.13 mm
Height: 26.16 mm
Length: 19.96 mm
Technology: Si
Unit Weight: 10 g
Configuration: Single
Mounting Style: Through Hole
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 70 A
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