IXYS IXGH50N90B2D1 IGBT Transistors 50 Amps 900V 2.7 Rds

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 400 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 75 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Continuous Collector Current Ic Max: 200 A

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 75 A