IXYS IXGH32N90B2 IGBT Transistors 32 Amps 900V 2.7 Rds
ManufacturerIXYS(View more products from this manufacturer)
ModelIXGH32N90B2
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Width: 5.3 mm
Height: 21.46 mm
Length: 16.26 mm
Technology: Si
Unit Weight: 6.500 g
Configuration: Single
Mounting Style: Through Hole
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 900 V
Continuous Collector Current Ic Max: 64 A
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