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IXYS IXGA20N250HV IGBT Transistors TO263 2500V 30A IGBT

ModelIXGA20N250HV
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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 150 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.5 kV

Collector-Emitter Saturation Voltage: 3.1 V

Continuous Collector Current at 25 C: 30 A

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