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IXYS IXFX44N80Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/44A

ModelIXFX44N80Q3
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Rise Time: 300 ns

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 185 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.25 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 44 A

Rds On - Drain-Source Resistance: 190 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

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