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IXYS IXFT50N30Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A

ModelIXFT50N30Q3
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Rise Time: 250 ns

Technology: Si

Unit Weight: 6.500 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 65 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 690 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 50 A

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 300 V

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