IXYS IXFQ60N50P3 MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET

Fall Time: 8 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 1.600 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 96 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.04 mW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 60 A

Forward Transconductance - Min: 60 S, 35 S

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 5 V