IXYS IXBF32N300 IGBT Transistors ISOPLUS 3KV 22A IGBT

Width: 5.21 mm

Height: 21.34 mm

Length: 20.29 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 160 W

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3 kV

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 2.8 V

Continuous Collector Current at 25 C: 40 A