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IXYS IXA4I1200UC-TUB IGBT Transistors Disc IGBT XPT-GenX3 TO-252D

ModelIXA4I1200UC-TUB
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Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 45 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 9 A

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