IXYS FMM110-015X2F TrenchT2 HiperFET N-Channel Power MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET

Width: 5.21 mm

Height: 21.34 mm

Length: 20.29 mm

Fall Time: 18 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 6.500 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Type: 2 N-Channel

Qg - Gate Charge: 150 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 180 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 33 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 53 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 75 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V