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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Gate-Source Cutoff Voltage: - 1.5 V
Drain-Source Current at Vgs=0: 1 mA
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Vgs - Gate-Source Breakdown Voltage: - 40 V
Vds - Drain-Source Breakdown Voltage: 20 V
