Infineon SPD50P03LGBTMA1 MOSFETs P-Ch -30V 50A DPAK-4 OptiMOS P

Width: 6.22 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 104 ns

Rise Time: 21.7 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 126 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14.8 ns

Typical Turn-Off Delay Time: 139 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 47 S

Rds On - Drain-Source Resistance: 5.7 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2 V