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Width: 5 mm
Height: 1.15 mm
Length: 6 mm
Fall Time: 3 ns, 2.2 ns
Rise Time: 3.8 ns, 2.8 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 10 nC, 12.8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.7 ns, 3.3 ns
Typical Turn-Off Delay Time: 17 ns, 15 ns
Id - Continuous Drain Current: 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 32 S, 36 S
Rds On - Drain-Source Resistance: 3.8 mOhms, 2.8 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
