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Fall Time: 3.4 ns, 9 ns
Rise Time: 3.4 ns, 8.1 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 8.9 nC, 7.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6.2 ns, 12 ns
Typical Turn-Off Delay Time: 5.8 ns, 15 ns
Id - Continuous Drain Current: 8.1 A, 8.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8.5 S, 10 S
Rds On - Drain-Source Resistance: 22 mOhms, 28 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
