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Type: Power MOSFET
Vgs(th): 1.9 V
Vgs (Max): 12V
Gate Charge (Qg): 41nC
Power consumption: 88W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 12V
Continuous drain current: 84A
Input Capacitance (Ciss): 2490pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 8.5mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.8|4.5V
