Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Type: Power MOSFET
Vgs(th): 4 V
Vgs (Max): 20V
Gate Charge (Qg): 10nC
Power consumption: 35W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 100V
Continuous drain current: 8.7A
Input Capacitance (Ciss): 310pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 190mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
