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Width: 3.9 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 3.9 ns, 15 ns
Rise Time: 4.8 ns, 14 ns
Technology: Si
Unit Weight: 540 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 6.8 nC, 8.1 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 5.1 ns, 8 ns
Typical Turn-Off Delay Time: 4.9 ns, 17 ns
Id - Continuous Drain Current: 6.8 A, 4.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8.2 S, 4.1 S
Rds On - Drain-Source Resistance: 22 mOhms, 51 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
